? 2001 ixys all rights reserved 98845 (6/01) symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c60a i dm t c = 25 c, pulse width limited by t jm 240 a i ar t c = 25 c60a e ar t c = 25 c50mj e as 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g n-channel enhancement mode avalanche rated, high dv/dt features international standard packages low r ds (on) rated for unclamped inductive load switching (uis) molding epoxies meet ul 94 v-0 flammability classification advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 33 m ? pulse test, t 300 s, duty cycle d 2 % to-247 ad (ixfh) g = gate d = drain s = source tab = drain hiperfet tm power mosfets to-268 ( ixft) case style (tab) g s v dss = 200 v i d25 = 60 a r ds(on) = 33 m ? ? ? ? ? t rr 250 ns ixfh 60n20 ixft 60n20 (tab) advance technical information
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfh 60n20 ixft 60n20 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 30 40 s c iss 5200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 880 pf c rss 260 pf t d(on) 38 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 63 ns t d(off) r g = 2.5 ? (external), 85 n s t f 26 ns q g(on) 155 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 38 nc q gd 55 nc r thjc 0.42 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 60 a i sm repetitive; pulse width limited by t jm 240 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = 25a, -di/dt = 100 a/ s, v r = 50 v 0.7 c i rm 8a to-268 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain
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